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On Ion Implantation Technology - 19th International Conference
AIP Conference Proceedings ; The Semiconductor of Tomorrow? The most important trend is the continued reduction of thermal budgets. Final dopant profiles are determined by implant profiles to a much higher degree of accuracy than ever before. Accurate and computationally effective ion implantation simulation methods should be implemented inside general purpose process simulators in order to facilitate rapid technology development and better control of manufacturing processes.
These simulators already include advanced diffusion models based on implant damage enhancement of diffusion rates. Without accurate prediction of implant profiles as well as the implant-induced defect distributions, all efforts to improve diffusion models would be wasteful. Until recently, the available ion implantation models had been either computationally inefficient such as Monte Carlo with channeling or limited to narrow ranges of energies, doses, and tilt angles as in most of analytical methods and look-up tables.
A secondary issue is inadequate modeling of the lateral implant distributions. These include increased energy intervals in analytical tables, implementation of double Pearson method for limited energy range, ability to take into account implant tilt and rotation angles and predict shadowing effects for arbitrary geometries, a fast Monte Carlo method for amorphous targets, reasonable Monte Carlo model for crystalline targets, and the ability to follow development of ion-implant cascades.
Since modern technology demands even better quality of ion implant simulation, the ion implantation models in ATHENA are currently going through serious revision. In this article we will present some results of new analytical models. The most difficult challenge for ion implantation theory is to accurately account for channeling dependence on energy, implant angles and dose, and overlaying non-crystalline material thickness e. Only finely tuned advanced Monte Carlo programs could address this problem from the first principles. The Dual-Pearson approach  is the only computationally efficient, semi-empirical model capable of simulating 1D-profiles with channeling effects taken into account.
Boron implantation through surface screen oxide. Tilt angle is 0o, energy and dose are as in Figure 1.
High Mass Molecular Ion Implantation
Figure 3 shows the energy dependence of implanted boron profiles. For comparison, the experimental data  is also given. Figure 3. Comparison to experiments from  are shown.
Figure 4 shows profiles of implanted phosphorus at keV for doses of 1e13, 5e13, 2e14, 5e14 and 1e The experimental profiles are also from . As the implant dose increases more damage is created which results in additional dechanneling of phosphorus ions. Therefore the profile tail shortens with increasing dose.
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- High Mass Molecular Ion Implantation.
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Figure 4. Conclusion The last two figures clearly show that the implemented model agrees very well with not only the experimental profiles measured by U. Implementation of ion implantation models developed by U.